Smart Computing Solution
New Product Announcement - Silicon Carbide Gen2 JBS Diode
Azuremoto introduces new 650V/ 1200V Silicon carbide JBS Diode. Featured with TJ rated to 175°C, a lower of forward voltage VF levels for flexible and robust high power and high voltage switching designs. The new generation Gen2 replace the original Gen1, offering higher efficiency components. Has higher surge capacity.
New Product Announcement - SiC Gen 1 MOS
Azuremotointroduces new 1200V Silicon carbide MOSFET. Featured with TJ rated to 175°C, a lower of RDS(on) levels for flexible and robust high power and high voltage switching designs. Qg/Qgs and Qrr parameters have been optimized to improve figure of merit and reduce EMI.
New Product Announcement - SiC Gen 1 JBS Diode
Azuremoto introduces new 1200V Silicon carbide JBS Diode. Featured with TJ rated to 175°C, a lower of forward voltage VF levels for flexible and robust high power and high voltage switching designs. Has higher surge capacity.
high performance, high reliability and excellent
Azuremoto Technology Co., Ltd. was established in September 2024 and focuses on the design of high-efficiency power semiconductor components (MOSFET & IGBT).
Relying on professional R&D design capabilities and experience, and close cooperation with foundry and packaging and testing partners, Provide customers with services that meet customer needs in an all-round way with high performance, high reliability and excellent service-to-cost ratio.
Main Commodities
The main core competitiveness comes from the research and development of power semiconductors, including product design, technology research and development, and private brand marketing worldwide, providing customers with a full range of complete power semiconductor solutions.
The main products include a full range of discrete power devices (Discrete Power Devices)
- Automotive power semiconductors
- Rectifier diode products
- Small signal diode/triode/MOSFET
- Power MOSFET
- IGBT
- Wide energy gap product series, including SiC, GaN
