SiC MOSFETs
Silicon Carbide (SiC) is a semiconductor base material that consists of pure silicon and pure carbon, and SIC MOSFET is one of the type of Silicon Carbide products. SIC MOSFETs is the third-generation power semiconductors enabling the highest performance optimized for many high-efficiency applications due to the superior switching speed, ultra-low Qrr, low DC losses at high temperature, and rugged UIS capabilities.
Products
Automotive SiC MOSFETs
Planar SiC MOSFETs
Trench SiC MOSFETs
SiC MOS
Our SiC MOS are designed to be fast and rugged and include system benefits from high efficiency to reduced system size and cost. Featured by TJ rated to be 175°C, a lower of RDS(on) levels for flexible and robust high power and high voltage switching designs.
Sic Diode
We propose 1200V Silicon Carbide Diodes low forward drop and zero reverse recovery performance for high switching frequency and power-dense designs. Replacing Si diodes can dramatically reduce losses and increase system efficiency.
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