Gan FETs
Gallium Nitride (GaN) is binary III/V direct bandgap semiconductor, and belongs to the category of wide-bandgap (WBG) semiconductor materials. With higher breakdown strength, faster switching speed, higher thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices.
Products
Low Voltage E-Mode GaN FETs
650V E-Mode GaN FETs
650V Cascode GaN FETs
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