Silicon Carbide Gen I JBS Diode
Azuremoto introduces new 1200V Silicon carbide JBS Diode. Featured with TJ rated to 175°C, a lower of forward voltage VF levels for flexible and robust high power and high voltage switching designs. Has higher surge capacity.
Key parameter table and related informations
| Part Number | Generation | VR (V) | IF @150°C (A) | VF (V) | IR (µA) | IFSM (A) | QC (nC) | PTOT (W) | Package | Reliability Level |
|---|---|---|---|---|---|---|---|---|---|---|
| AZSDP10S120G1 | Gen 1 | 1200 | 10 | 1.39 | 3 | 118 | 55 | 208 | TO-220-2 | Industrial |
| AZSDV20S120G1 | Gen 1 | 1200 | 20 | 1.37 | 5 | 220 | 110 | 242 | TO-247-2 | Industrial |
| AZSDV30S120G1 | Gen 1 | 1200 | 30 | 1.41 | 11 | 270 | 160 | 405 | TO-247-2 | Industrial |
| AZSDV60D120G1 | Gen 1 | 1200 | 60 | 1.41 | 11 | 270 | 160 | 810 | TO-247-3 | Industrial |
Advantages of Azuremoto SiC Gen I JBS
- Zero reverse recovery current / forward recovery voltage
- Low forward voltage (VF) drops with positive temperature coefficient
- Temperature-independent switching behavior
For the Following Applications :
- PV Inverters
- Charging Piles
- Energy storage systems
- PFC
Useful Links
- SiC Gen I JBS Diode Product Portfolio
- Selection Guide