Silicon Carbide Gen I MOSFETs
Azuremotointroduces new 1200V Silicon carbide MOSFET. Featured with TJ rated to 175°C, a lower of RDS(on) levels for flexible and robust high power and high voltage switching designs. Qg/Qgs and Qrr parameters have been optimized to improve figure of merit and reduce EMI.
Key parameter table and related informations
| Part Number | Generation | VDS max (V) | VGS op (V) | RDS(ON) (mΩ) | ID @25°C (A) | Qg (nC) | Coss (pF) | PTOT (W) | TJ max (°C) | Package | Reliability Level |
|---|---|---|---|---|---|---|---|---|---|---|---|
| AZV4CL120L012G1 | Gen 1 | 1200 | -5/+20 | 12 | 214 | 577 | 343 | 938 | 175 | TO-247-4 | Industrial |
| AZV4CL120L035G1 | Gen 1 | 1200 | -5/+18 | 35 | 75 | 190 | 129 | 366 | 175 | TO-247-4 | Industrial |
| AZVCL120L040G1 | Gen 1 | 1200 | -5/+20 | 40 | 75 | 156 | 115 | 366 | 175 | TO-247-4 | Industrial |
| AZVCL120L040G1 | Gen 1 | 1200 | -5/+20 | 40 | 76 | 156 | 115 | 375 | 175 | TO-247-4 | Industrial |
| AZS7120L040G1 | Gen 1 | 1200 | -5/+20 | 40 | 76 | 163 | 110 | 366 | 175 | TO-263-7 | Industrial |
| AZV4CL120L075G1 | Gen 1 | 1200 | -5/+20 | 75 | 47 | 87 | 66 | 288 | 175 | TO-247-4 | Industrial |
| AZVCL120L075G1 | Gen 1 | 1200 | -5/+20 | 75 | 47 | 87 | 66 | 288 | 175 | TO-247-4 | Industrial |
| AZS7120L075G1 | Gen 1 | 1200 | -5/+20 | 75 | 47 | 87 | 66 | 288 | 175 | TO-263-7 | Industrial |
| AZV4CL120L012G1AM | Gen 1 | 1200 | -5/+20 | 12 | 214 | 577 | 343 | 938 | 175 | TO-247-4 | Automotive |
| AZVCL120L035G1AM | Gen 1 | 1200 | -5/+18 | 35 | 75 | 190 | 129 | 366 | 175 | TO-247-4 | Automotive |
| AZVCL120L040G1AM | Gen 1 | 1200 | -5/+20 | 40 | 75 | 156 | 115 | 366 | 175 | TO-247-4 | Automotive |
| AZVCL120L075G1AM | Gen 1 | 1200 | -5/+20 | 75 | 47 | 87 | 66 | 288 | 175 | TO-247-4 | Automotive |
| AZS7120L075G1AM | Gen 1 | 1200 | -5/+20 | 75 | 47 | 87 | 66 | 288 | 175 | TO-263-7 | Automotive |
Advantages of AzuremotoSiCGenI MOSFETs
- Optimize higher power application
- High blocking voltage with low On-resistance
- High speedswitching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
For the Following Applications :
- PV Inverters
- Charging Piles
- Energy storage systems
- On Board Charging
Useful Links
- SiC Gen I MOSFET Product Portfolio
- Selection Guide