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Azuremoto

Latest News 2026-06-29

2026 Electronica Shanghai-Azuremoto

Azuremoto will exhibit at Booth No. 4 .117 in Electronica Shanghai 2026. We warmly welcome everyone to join us!

Latest News 2026-06-16

Forum of 2026 Electronica Shanghai

Azuremoto participate forum at 10:30-11:00 on July 02 during 2026 Electronica Shanghai

Latest News 2026-03-31

2026 EMK x Nepcon Korea

Azuremoto participate in 2026 EMK x Nepcon Korea

About Us

high performance, high reliability and excellent

Azuremoto Technology Co., Ltd. was established in September 2024 and focuses on the design of high-efficiency power semiconductor components (MOSFET & IGBT).

Relying on professional R&D design capabilities and experience, and close cooperation with foundry and packaging and testing partners, Provide customers with services that meet customer needs in an all-round way with high performance, high reliability and excellent service-to-cost ratio.

Have the industry's first-class technology research and development, business marketing and administrative management teams to help Haichi grow rapidly.
Focus on the "professional power semiconductor design" industry and commit to the development of advanced technology.
Look at the world market and operate internationally. Focus on long-term strategies and pursue sustainable operations.
The vision is that Haichi aims to become a technology leader, service-oriented, and the provider of the greatest overall benefits to customers.
Our Services

Main Commodities

The main core competitiveness comes from the research and development of power semiconductors, including product design, technology research and development, and private brand marketing worldwide, providing customers with a full range of complete power semiconductor solutions.

The main products include a full range of discrete power devices (Discrete Power Devices)

  • Automotive power semiconductors
  • Rectifier diode products
  • Small signal diode/triode/MOSFET
  • Power MOSFET
  • IGBT
  • Wide energy gap product series, including SiC, GaN