AzureMoto and Leshan Radio formed a strategic partnership to integrate design and manufacturing, using an OEM/ODM model to accelerate power‑semiconductor product development. The collaboration targets AI, data centers, EVs, and new‑energy markets, enhancing global competitiveness and expanding applications of MOSFET, rectifier, ESD, and wide‑bandgap devices.
AzureMoto Technology – AI Power Semiconductor Press Release
AzureMoto joined KGI Securities’ 2026 Q1 Taiwan Corporate Day, where CEO Stanley Lin highlighted how AI growth is driving massive power‑efficiency demands. As GPU power rises and data centers shift to 48V and HVDC architectures, SiC, GaN, and advanced MOSFETs become essential for high‑efficiency AI power systems.
Azuremoto introduces new 650V/ 1200V Silicon carbide JBS Diode. Featured with TJ rated to 175°C, a lower of forward voltage VF levels for flexible and robust high power and high voltage switching designs. The new generation Gen2 replace the original Gen1, offering higher efficiency components. Has higher surge capacity.
Azuremoto Technology Co., Ltd. was established in September 2024 and focuses on the design of high-efficiency power semiconductor components (MOSFET & IGBT).
Relying on professional R&D design capabilities and experience, and close cooperation with foundry and packaging and testing partners, Provide customers with services that meet customer needs in an all-round way with high performance, high reliability and excellent service-to-cost ratio.

The main core competitiveness comes from the research and development of power semiconductors, including product design, technology research and development, and private brand marketing worldwide, providing customers with a full range of complete power semiconductor solutions.
The main products include a full range of discrete power devices (Discrete Power Devices)