Silicon Carbide Gen II JBS Diode
Azuremoto introduces new 650V/ 1200V Silicon carbide JBS Diode. Featured with TJ rated to 175°C, a lower of forward voltage VF levels for flexible and robust high power and high voltage switching designs. The new generation Gen2 replace the original Gen1, offering higher efficiency components. Has higher surge capacity.
Key parameter table and related information
| Part Number | Generation | VR (V) | IF @150°C (A) | VF (V) | IR (µA) | IFSM (A) | QC (nC) | PTOT (W) | Package | Reliability Level |
|---|---|---|---|---|---|---|---|---|---|---|
| AZSDSB02S120G1 | Gen 2 | 1200 | 2 | 1.3 | 1.2 | 25 | 12 | 27 | SMB-C | Industrial |
| AZSDH210S065G2 | Gen 2 | 650 | 10 | 1.37 | 0.5 | 80 | 34 | 75 | TO-252-2 | Industrial |
| AZSDF10D065G2 | Gen 2 | 650 | 10 | 1.3 | 50 | 80 | 30 | 59 | TO-220F | Industrial |
Advantages of Azuremoto SiC Gen2 JBS
- Zero reverse recovery current / forward recovery voltage
- Low forward voltage (VF) drops with positive temperature coefficient
- Temperature-independent switching behavior
For the Following Applications:
- PV Inverters
- Charging Piles
- Energy storage systems
- PFC
Useful Links:
- SiC Gen2 JBS Diode Product Portfolio
- Selection Guide