Rectifier and Diodes are identified with forward current of 1.0 Ampere. > 1.0 Ampere or higher is rectifier and designed to convert alternating current (AC) from mains supply to direct current (DC). In contrast, < 0.5 Ampere or lower is Diodes and intended to be used for high-frequency applications (up to 1MHz), diode logic, weak signal detection, diode clipping, etc. We offer comprehensive Rectifiers and Diodes portfolio to cover to AC and DC applications.
Bipolar transistors are a type of transistor composed of PN junctions, and it is used both electrons and holes as charge carriers, which are also called bipolar junction transistors (BJTs). BJT has three terminals: base, collector, and emitter. There are two types: NPN-BJT and PNP-BJT. Bias Resistor built-in Transistor (BRT) is one of the product categories of bipolar transistor, which has this resistor built in and is mainly used as a switch. We offer the industry standards for general purpose applications.
The ESD protection diodes is also so-called TVS Diodes Arrays, and designed to protect analog and digital signal lines from electrostatic discharge (ESD), Electrical Fast Transients (EFT), and lightning-induced surge currents. TVS (Transient Voltage Suppressor) Diodes is used as a voltage clamping surge protector to absorb a large amount of energy for a short period in order to ensure a low operating resistance and high current rating. We offer the surface mount TVS Diodes with peak power ratings from 200W to 5kW, and standoff voltages from 5V to 467V.
Metal-Oxide-Silicon Field-Effect Transistors is designed to operate at voltages up to 1 kV while offering high switching speeds and optimal efficiency. To be one of the expertise of MOSFET providers in the industry, our comprehensive and extensive portfolio from low voltage 20 Volts to high voltage 700~800 Volts by advanced fabrication technology, Trench, Shielded Gate Transistor (SGT) and Super Junction.
Silicon Carbide (SiC) is a semiconductor base material that consists of pure silicon and pure carbon, and SIC MOSFET is one of the type of Silicon Carbide products. SIC MOSFETs is the third-generation power semiconductors enabling the highest performance optimized for many high-efficiency applications due to the superior switching speed, ultra-low Qrr, low DC losses at high temperature, and rugged UIS capabilities.
Gallium Nitride (GaN) is binary III/V direct bandgap semiconductor, and belongs to the category of wide-bandgap (WBG) semiconductor materials. With higher breakdown strength, faster switching speed, higher thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices.
Insulated Gate Bipolar Transistor is a cross between a conventional Bipolar Junction Transistor (BJT) and a Field Effect Transistor (MOSFET) making it ideal as a semiconductor switching device. It is a power switching transistor by high-voltage, high-current applications for use in power supply and motor control circuits.